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Diffusion, activation, and regrowth behavior of high dose P implants in Ge
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , , , , , , |
| In: | Applied Physics Letters, 88, 2006, 16 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
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| Schlagwörter: |
| author_facet |
Satta, A. Simoen, E. Duffy, R. Janssens, T. Clarysse, T. Benedetti, A. Meuris, M. Vandervorst, W. Satta, A. Simoen, E. Duffy, R. Janssens, T. Clarysse, T. Benedetti, A. Meuris, M. Vandervorst, W. |
|---|---|
| author |
Satta, A. Simoen, E. Duffy, R. Janssens, T. Clarysse, T. Benedetti, A. Meuris, M. Vandervorst, W. |
| spellingShingle |
Satta, A. Simoen, E. Duffy, R. Janssens, T. Clarysse, T. Benedetti, A. Meuris, M. Vandervorst, W. Applied Physics Letters Diffusion, activation, and regrowth behavior of high dose P implants in Ge Physics and Astronomy (miscellaneous) |
| author_sort |
satta, a. |
| spelling |
Satta, A. Simoen, E. Duffy, R. Janssens, T. Clarysse, T. Benedetti, A. Meuris, M. Vandervorst, W. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.2196227 <jats:p>Time evolution of the chemical profile, electrical activity, and regrowth of P implanted in Ge at a concentration above the maximum equilibrium solubility is investigated at 500°C rapid thermal annealing temperature. During the first anneal, a second, epitaxial regrowth of a part of the amorphous layer leads to P trapping in substitutional sites at a level of about 4×1020atoms∕cm3. However, nonsubstitutional P atoms frozen in the crystal at high concentration during recrystallization form large, inactive precipitates of peculiar circular shape. Simultaneously, long annealing time leads to continuing, extensive P out- and indiffusion affecting both the P chemical profile and junction sheet resistance.</jats:p> Diffusion, activation, and regrowth behavior of high dose P implants in Ge Applied Physics Letters |
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AIP Publishing, 2006 |
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AIP Publishing, 2006 |
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Applied Physics Letters |
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| title |
Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| title_unstemmed |
Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| title_full |
Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| title_fullStr |
Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| title_full_unstemmed |
Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| title_short |
Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| title_sort |
diffusion, activation, and regrowth behavior of high dose p implants in ge |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.2196227 |
| publishDate |
2006 |
| physical |
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| description |
<jats:p>Time evolution of the chemical profile, electrical activity, and regrowth of P implanted in Ge at a concentration above the maximum equilibrium solubility is investigated at 500°C rapid thermal annealing temperature. During the first anneal, a second, epitaxial regrowth of a part of the amorphous layer leads to P trapping in substitutional sites at a level of about 4×1020atoms∕cm3. However, nonsubstitutional P atoms frozen in the crystal at high concentration during recrystallization form large, inactive precipitates of peculiar circular shape. Simultaneously, long annealing time leads to continuing, extensive P out- and indiffusion affecting both the P chemical profile and junction sheet resistance.</jats:p> |
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| author | Satta, A., Simoen, E., Duffy, R., Janssens, T., Clarysse, T., Benedetti, A., Meuris, M., Vandervorst, W. |
| author_facet | Satta, A., Simoen, E., Duffy, R., Janssens, T., Clarysse, T., Benedetti, A., Meuris, M., Vandervorst, W., Satta, A., Simoen, E., Duffy, R., Janssens, T., Clarysse, T., Benedetti, A., Meuris, M., Vandervorst, W. |
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| description | <jats:p>Time evolution of the chemical profile, electrical activity, and regrowth of P implanted in Ge at a concentration above the maximum equilibrium solubility is investigated at 500°C rapid thermal annealing temperature. During the first anneal, a second, epitaxial regrowth of a part of the amorphous layer leads to P trapping in substitutional sites at a level of about 4×1020atoms∕cm3. However, nonsubstitutional P atoms frozen in the crystal at high concentration during recrystallization form large, inactive precipitates of peculiar circular shape. Simultaneously, long annealing time leads to continuing, extensive P out- and indiffusion affecting both the P chemical profile and junction sheet resistance.</jats:p> |
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| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Satta, A. Simoen, E. Duffy, R. Janssens, T. Clarysse, T. Benedetti, A. Meuris, M. Vandervorst, W. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.2196227 <jats:p>Time evolution of the chemical profile, electrical activity, and regrowth of P implanted in Ge at a concentration above the maximum equilibrium solubility is investigated at 500°C rapid thermal annealing temperature. During the first anneal, a second, epitaxial regrowth of a part of the amorphous layer leads to P trapping in substitutional sites at a level of about 4×1020atoms∕cm3. However, nonsubstitutional P atoms frozen in the crystal at high concentration during recrystallization form large, inactive precipitates of peculiar circular shape. Simultaneously, long annealing time leads to continuing, extensive P out- and indiffusion affecting both the P chemical profile and junction sheet resistance.</jats:p> Diffusion, activation, and regrowth behavior of high dose P implants in Ge Applied Physics Letters |
| spellingShingle | Satta, A., Simoen, E., Duffy, R., Janssens, T., Clarysse, T., Benedetti, A., Meuris, M., Vandervorst, W., Applied Physics Letters, Diffusion, activation, and regrowth behavior of high dose P implants in Ge, Physics and Astronomy (miscellaneous) |
| title | Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| title_full | Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| title_fullStr | Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| title_full_unstemmed | Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| title_short | Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| title_sort | diffusion, activation, and regrowth behavior of high dose p implants in ge |
| title_unstemmed | Diffusion, activation, and regrowth behavior of high dose P implants in Ge |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.2196227 |