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Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon
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| Zeitschriftentitel: | Journal of Applied Physics |
|---|---|
| Personen und Körperschaften: | , , , |
| In: | Journal of Applied Physics, 99, 2006, 8 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Min, B. C. Lodder, J. C. Jansen, R. Motohashi, K. Min, B. C. Lodder, J. C. Jansen, R. Motohashi, K. |
|---|---|
| author |
Min, B. C. Lodder, J. C. Jansen, R. Motohashi, K. |
| spellingShingle |
Min, B. C. Lodder, J. C. Jansen, R. Motohashi, K. Journal of Applied Physics Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon General Physics and Astronomy |
| author_sort |
min, b. c. |
| spelling |
Min, B. C. Lodder, J. C. Jansen, R. Motohashi, K. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.2176317 <jats:p>The resistance of Co–Al2O3–Si tunnel contacts for electrical spin injection from a ferromagnet into silicon is investigated. The contacts form a substantial Schottky barrier, 0.7eV, which plays a dominant role in the electronic transport. On Si with a low doping concentration (∼1015cm−3), the contact resistance is affected by the Al2O3 tunnel barrier only in the forward bias. In the reverse bias (the spin injection condition), the Schottky barrier results in a very high contact resistance, ∼102Ωm2. While the contact resistance is improved to ∼10−2Ωm2 using Si with a high doping concentration (∼5×1019cm−3), it is still about five to six orders of magnitude higher than the value needed for resistance matching to silicon.</jats:p> Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon Journal of Applied Physics |
| doi_str_mv |
10.1063/1.2176317 |
| facet_avail |
Online |
| format |
ElectronicArticle |
| fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjIxNzYzMTc |
| id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjIxNzYzMTc |
| institution |
DE-D275 DE-Bn3 DE-Brt1 DE-D161 DE-Gla1 DE-Zi4 DE-15 DE-Pl11 DE-Rs1 DE-105 DE-14 DE-Ch1 DE-L229 |
| imprint |
AIP Publishing, 2006 |
| imprint_str_mv |
AIP Publishing, 2006 |
| issn |
1089-7550 0021-8979 |
| issn_str_mv |
1089-7550 0021-8979 |
| language |
English |
| mega_collection |
AIP Publishing (CrossRef) |
| match_str |
min2006cobaltal2o3silicontunnelcontactsforelectricalspininjectionintosilicon |
| publishDateSort |
2006 |
| publisher |
AIP Publishing |
| recordtype |
ai |
| record_format |
ai |
| series |
Journal of Applied Physics |
| source_id |
49 |
| title |
Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| title_unstemmed |
Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| title_full |
Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| title_fullStr |
Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| title_full_unstemmed |
Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| title_short |
Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| title_sort |
cobalt-al2o3-silicon tunnel contacts for electrical spin injection into silicon |
| topic |
General Physics and Astronomy |
| url |
http://dx.doi.org/10.1063/1.2176317 |
| publishDate |
2006 |
| physical |
|
| description |
<jats:p>The resistance of Co–Al2O3–Si tunnel contacts for electrical spin injection from a ferromagnet into silicon is investigated. The contacts form a substantial Schottky barrier, 0.7eV, which plays a dominant role in the electronic transport. On Si with a low doping concentration (∼1015cm−3), the contact resistance is affected by the Al2O3 tunnel barrier only in the forward bias. In the reverse bias (the spin injection condition), the Schottky barrier results in a very high contact resistance, ∼102Ωm2. While the contact resistance is improved to ∼10−2Ωm2 using Si with a high doping concentration (∼5×1019cm−3), it is still about five to six orders of magnitude higher than the value needed for resistance matching to silicon.</jats:p> |
| container_issue |
8 |
| container_start_page |
0 |
| container_title |
Journal of Applied Physics |
| container_volume |
99 |
| format_de105 |
Article, E-Article |
| format_de14 |
Article, E-Article |
| format_de15 |
Article, E-Article |
| format_de520 |
Article, E-Article |
| format_de540 |
Article, E-Article |
| format_dech1 |
Article, E-Article |
| format_ded117 |
Article, E-Article |
| format_degla1 |
E-Article |
| format_del152 |
Buch |
| format_del189 |
Article, E-Article |
| format_dezi4 |
Article |
| format_dezwi2 |
Article, E-Article |
| format_finc |
Article, E-Article |
| format_nrw |
Article, E-Article |
| _version_ |
1792332177582587905 |
| geogr_code |
not assigned |
| last_indexed |
2024-03-01T13:52:40.733Z |
| geogr_code_person |
not assigned |
| openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Cobalt-Al2O3-silicon+tunnel+contacts+for+electrical+spin+injection+into+silicon&rft.date=2006-04-15&genre=article&issn=1089-7550&volume=99&issue=8&jtitle=Journal+of+Applied+Physics&atitle=Cobalt-Al2O3-silicon+tunnel+contacts+for+electrical+spin+injection+into+silicon&aulast=Motohashi&aufirst=K.&rft_id=info%3Adoi%2F10.1063%2F1.2176317&rft.language%5B0%5D=eng |
| SOLR | |
| _version_ | 1792332177582587905 |
| author | Min, B. C., Lodder, J. C., Jansen, R., Motohashi, K. |
| author_facet | Min, B. C., Lodder, J. C., Jansen, R., Motohashi, K., Min, B. C., Lodder, J. C., Jansen, R., Motohashi, K. |
| author_sort | min, b. c. |
| container_issue | 8 |
| container_start_page | 0 |
| container_title | Journal of Applied Physics |
| container_volume | 99 |
| description | <jats:p>The resistance of Co–Al2O3–Si tunnel contacts for electrical spin injection from a ferromagnet into silicon is investigated. The contacts form a substantial Schottky barrier, 0.7eV, which plays a dominant role in the electronic transport. On Si with a low doping concentration (∼1015cm−3), the contact resistance is affected by the Al2O3 tunnel barrier only in the forward bias. In the reverse bias (the spin injection condition), the Schottky barrier results in a very high contact resistance, ∼102Ωm2. While the contact resistance is improved to ∼10−2Ωm2 using Si with a high doping concentration (∼5×1019cm−3), it is still about five to six orders of magnitude higher than the value needed for resistance matching to silicon.</jats:p> |
| doi_str_mv | 10.1063/1.2176317 |
| facet_avail | Online |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
| format_de15 | Article, E-Article |
| format_de520 | Article, E-Article |
| format_de540 | Article, E-Article |
| format_dech1 | Article, E-Article |
| format_ded117 | Article, E-Article |
| format_degla1 | E-Article |
| format_del152 | Buch |
| format_del189 | Article, E-Article |
| format_dezi4 | Article |
| format_dezwi2 | Article, E-Article |
| format_finc | Article, E-Article |
| format_nrw | Article, E-Article |
| geogr_code | not assigned |
| geogr_code_person | not assigned |
| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjIxNzYzMTc |
| imprint | AIP Publishing, 2006 |
| imprint_str_mv | AIP Publishing, 2006 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
| issn | 1089-7550, 0021-8979 |
| issn_str_mv | 1089-7550, 0021-8979 |
| language | English |
| last_indexed | 2024-03-01T13:52:40.733Z |
| match_str | min2006cobaltal2o3silicontunnelcontactsforelectricalspininjectionintosilicon |
| mega_collection | AIP Publishing (CrossRef) |
| physical | |
| publishDate | 2006 |
| publishDateSort | 2006 |
| publisher | AIP Publishing |
| record_format | ai |
| recordtype | ai |
| series | Journal of Applied Physics |
| source_id | 49 |
| spelling | Min, B. C. Lodder, J. C. Jansen, R. Motohashi, K. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.2176317 <jats:p>The resistance of Co–Al2O3–Si tunnel contacts for electrical spin injection from a ferromagnet into silicon is investigated. The contacts form a substantial Schottky barrier, 0.7eV, which plays a dominant role in the electronic transport. On Si with a low doping concentration (∼1015cm−3), the contact resistance is affected by the Al2O3 tunnel barrier only in the forward bias. In the reverse bias (the spin injection condition), the Schottky barrier results in a very high contact resistance, ∼102Ωm2. While the contact resistance is improved to ∼10−2Ωm2 using Si with a high doping concentration (∼5×1019cm−3), it is still about five to six orders of magnitude higher than the value needed for resistance matching to silicon.</jats:p> Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon Journal of Applied Physics |
| spellingShingle | Min, B. C., Lodder, J. C., Jansen, R., Motohashi, K., Journal of Applied Physics, Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon, General Physics and Astronomy |
| title | Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| title_full | Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| title_fullStr | Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| title_full_unstemmed | Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| title_short | Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| title_sort | cobalt-al2o3-silicon tunnel contacts for electrical spin injection into silicon |
| title_unstemmed | Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon |
| topic | General Physics and Astronomy |
| url | http://dx.doi.org/10.1063/1.2176317 |