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Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties

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Zeitschriftentitel: Applied Physics Letters
Personen und Körperschaften: Ossicini, S., Degoli, E., Iori, F., Luppi, E., Magri, R., Cantele, G., Trani, F., Ninno, D.
In: Applied Physics Letters, 87, 2005, 17
Format: E-Article
Sprache: Englisch
veröffentlicht:
AIP Publishing
Schlagwörter:
Physics and Astronomy (miscellaneous)
author_facet Ossicini, S.
Degoli, E.
Iori, F.
Luppi, E.
Magri, R.
Cantele, G.
Trani, F.
Ninno, D.
Ossicini, S.
Degoli, E.
Iori, F.
Luppi, E.
Magri, R.
Cantele, G.
Trani, F.
Ninno, D.
author Ossicini, S.
Degoli, E.
Iori, F.
Luppi, E.
Magri, R.
Cantele, G.
Trani, F.
Ninno, D.
spellingShingle Ossicini, S.
Degoli, E.
Iori, F.
Luppi, E.
Magri, R.
Cantele, G.
Trani, F.
Ninno, D.
Applied Physics Letters
Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
Physics and Astronomy (miscellaneous)
author_sort ossicini, s.
spelling Ossicini, S. Degoli, E. Iori, F. Luppi, E. Magri, R. Cantele, G. Trani, F. Ninno, D. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.2119424 <jats:p>The effects of B and P codoping on the impurity formation energies and electronic properties of Si nanocrystals (Si-nc) are calculated by a first-principles method. We show that, if carriers in the Si-nc are perfectly compensated by simultaneous doping with n- and p-type impurities, the Si-nc undergo a minor structural distortion around the impurities and that the formation energies are always smaller than those for the corresponding single-doped cases. The band gap of the codoped Si-nc is strongly reduced with respect to the gap of the pure ones showing the possibility of an impurity based engineering of the photoluminescence properties of Si-nc.</jats:p> Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties Applied Physics Letters
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series Applied Physics Letters
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title Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
title_unstemmed Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
title_full Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
title_fullStr Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
title_full_unstemmed Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
title_short Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
title_sort simultaneously b- and p-doped silicon nanoclusters: formation energies and electronic properties
topic Physics and Astronomy (miscellaneous)
url http://dx.doi.org/10.1063/1.2119424
publishDate 2005
physical
description <jats:p>The effects of B and P codoping on the impurity formation energies and electronic properties of Si nanocrystals (Si-nc) are calculated by a first-principles method. We show that, if carriers in the Si-nc are perfectly compensated by simultaneous doping with n- and p-type impurities, the Si-nc undergo a minor structural distortion around the impurities and that the formation energies are always smaller than those for the corresponding single-doped cases. The band gap of the codoped Si-nc is strongly reduced with respect to the gap of the pure ones showing the possibility of an impurity based engineering of the photoluminescence properties of Si-nc.</jats:p>
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author Ossicini, S., Degoli, E., Iori, F., Luppi, E., Magri, R., Cantele, G., Trani, F., Ninno, D.
author_facet Ossicini, S., Degoli, E., Iori, F., Luppi, E., Magri, R., Cantele, G., Trani, F., Ninno, D., Ossicini, S., Degoli, E., Iori, F., Luppi, E., Magri, R., Cantele, G., Trani, F., Ninno, D.
author_sort ossicini, s.
container_issue 17
container_start_page 0
container_title Applied Physics Letters
container_volume 87
description <jats:p>The effects of B and P codoping on the impurity formation energies and electronic properties of Si nanocrystals (Si-nc) are calculated by a first-principles method. We show that, if carriers in the Si-nc are perfectly compensated by simultaneous doping with n- and p-type impurities, the Si-nc undergo a minor structural distortion around the impurities and that the formation energies are always smaller than those for the corresponding single-doped cases. The band gap of the codoped Si-nc is strongly reduced with respect to the gap of the pure ones showing the possibility of an impurity based engineering of the photoluminescence properties of Si-nc.</jats:p>
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id ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjIxMTk0MjQ
imprint AIP Publishing, 2005
imprint_str_mv AIP Publishing, 2005
institution DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Zi4, DE-Gla1, DE-15, DE-Pl11, DE-Rs1, DE-14, DE-105, DE-Ch1, DE-L229
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publishDate 2005
publishDateSort 2005
publisher AIP Publishing
record_format ai
recordtype ai
series Applied Physics Letters
source_id 49
spelling Ossicini, S. Degoli, E. Iori, F. Luppi, E. Magri, R. Cantele, G. Trani, F. Ninno, D. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.2119424 <jats:p>The effects of B and P codoping on the impurity formation energies and electronic properties of Si nanocrystals (Si-nc) are calculated by a first-principles method. We show that, if carriers in the Si-nc are perfectly compensated by simultaneous doping with n- and p-type impurities, the Si-nc undergo a minor structural distortion around the impurities and that the formation energies are always smaller than those for the corresponding single-doped cases. The band gap of the codoped Si-nc is strongly reduced with respect to the gap of the pure ones showing the possibility of an impurity based engineering of the photoluminescence properties of Si-nc.</jats:p> Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties Applied Physics Letters
spellingShingle Ossicini, S., Degoli, E., Iori, F., Luppi, E., Magri, R., Cantele, G., Trani, F., Ninno, D., Applied Physics Letters, Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties, Physics and Astronomy (miscellaneous)
title Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
title_full Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
title_fullStr Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
title_full_unstemmed Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
title_short Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
title_sort simultaneously b- and p-doped silicon nanoclusters: formation energies and electronic properties
title_unstemmed Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties
topic Physics and Astronomy (miscellaneous)
url http://dx.doi.org/10.1063/1.2119424