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Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , , , , , , |
| In: | Applied Physics Letters, 92, 2008, 12 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
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| Schlagwörter: |
| author_facet |
Cherns, D. Meshi, L. Griffiths, I. Khongphetsak, S. Novikov, S. V. Farley, N. Campion, R. P. Foxon, C. T. Cherns, D. Meshi, L. Griffiths, I. Khongphetsak, S. Novikov, S. V. Farley, N. Campion, R. P. Foxon, C. T. |
|---|---|
| author |
Cherns, D. Meshi, L. Griffiths, I. Khongphetsak, S. Novikov, S. V. Farley, N. Campion, R. P. Foxon, C. T. |
| spellingShingle |
Cherns, D. Meshi, L. Griffiths, I. Khongphetsak, S. Novikov, S. V. Farley, N. Campion, R. P. Foxon, C. T. Applied Physics Letters Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers Physics and Astronomy (miscellaneous) |
| author_sort |
cherns, d. |
| spelling |
Cherns, D. Meshi, L. Griffiths, I. Khongphetsak, S. Novikov, S. V. Farley, N. Campion, R. P. Foxon, C. T. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.2899944 <jats:p>Transmission and scanning electron microscopies are used to examine the epitaxial lateral overgrowth of GaN on GaN nanocolumns grown on AlN/(0001)sapphire by molecular beam epitaxy. Initially, N-rich growth gave a bimodal morphology consisting of defect-free Ga-polar nanocolumns emanating from a compact, highly defective N-polar layer. Under subsequent Ga-rich conditions, the nanocolumns grew laterally to produce continuous Ga-polar overlayers. Threading dislocation (TD) densities in the overlayer were in the range of 108–109cm−2, up to two orders of magnitude less than in the N-polar underlayer. It is proposed that the change in polarity is a key factor controlling the reduction in TD density.</jats:p> Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers Applied Physics Letters |
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Applied Physics Letters |
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| title |
Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_unstemmed |
Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_full |
Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_fullStr |
Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_full_unstemmed |
Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_short |
Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_sort |
defect reduction in gan/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.2899944 |
| publishDate |
2008 |
| physical |
|
| description |
<jats:p>Transmission and scanning electron microscopies are used to examine the epitaxial lateral overgrowth of GaN on GaN nanocolumns grown on AlN/(0001)sapphire by molecular beam epitaxy. Initially, N-rich growth gave a bimodal morphology consisting of defect-free Ga-polar nanocolumns emanating from a compact, highly defective N-polar layer. Under subsequent Ga-rich conditions, the nanocolumns grew laterally to produce continuous Ga-polar overlayers. Threading dislocation (TD) densities in the overlayer were in the range of 108–109cm−2, up to two orders of magnitude less than in the N-polar underlayer. It is proposed that the change in polarity is a key factor controlling the reduction in TD density.</jats:p> |
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| author | Cherns, D., Meshi, L., Griffiths, I., Khongphetsak, S., Novikov, S. V., Farley, N., Campion, R. P., Foxon, C. T. |
| author_facet | Cherns, D., Meshi, L., Griffiths, I., Khongphetsak, S., Novikov, S. V., Farley, N., Campion, R. P., Foxon, C. T., Cherns, D., Meshi, L., Griffiths, I., Khongphetsak, S., Novikov, S. V., Farley, N., Campion, R. P., Foxon, C. T. |
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| description | <jats:p>Transmission and scanning electron microscopies are used to examine the epitaxial lateral overgrowth of GaN on GaN nanocolumns grown on AlN/(0001)sapphire by molecular beam epitaxy. Initially, N-rich growth gave a bimodal morphology consisting of defect-free Ga-polar nanocolumns emanating from a compact, highly defective N-polar layer. Under subsequent Ga-rich conditions, the nanocolumns grew laterally to produce continuous Ga-polar overlayers. Threading dislocation (TD) densities in the overlayer were in the range of 108–109cm−2, up to two orders of magnitude less than in the N-polar underlayer. It is proposed that the change in polarity is a key factor controlling the reduction in TD density.</jats:p> |
| doi_str_mv | 10.1063/1.2899944 |
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| imprint | AIP Publishing, 2008 |
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| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
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| spelling | Cherns, D. Meshi, L. Griffiths, I. Khongphetsak, S. Novikov, S. V. Farley, N. Campion, R. P. Foxon, C. T. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.2899944 <jats:p>Transmission and scanning electron microscopies are used to examine the epitaxial lateral overgrowth of GaN on GaN nanocolumns grown on AlN/(0001)sapphire by molecular beam epitaxy. Initially, N-rich growth gave a bimodal morphology consisting of defect-free Ga-polar nanocolumns emanating from a compact, highly defective N-polar layer. Under subsequent Ga-rich conditions, the nanocolumns grew laterally to produce continuous Ga-polar overlayers. Threading dislocation (TD) densities in the overlayer were in the range of 108–109cm−2, up to two orders of magnitude less than in the N-polar underlayer. It is proposed that the change in polarity is a key factor controlling the reduction in TD density.</jats:p> Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers Applied Physics Letters |
| spellingShingle | Cherns, D., Meshi, L., Griffiths, I., Khongphetsak, S., Novikov, S. V., Farley, N., Campion, R. P., Foxon, C. T., Applied Physics Letters, Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers, Physics and Astronomy (miscellaneous) |
| title | Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_full | Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_fullStr | Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_full_unstemmed | Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_short | Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_sort | defect reduction in gan/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| title_unstemmed | Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.2899944 |