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Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , , , , , , |
| In: | Applied Physics Letters, 92, 2008, 10 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
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| Schlagwörter: |
| author_facet |
Rainò, G. Salhi, A. Tasco, V. Intartaglia, R. Cingolani, R. Rouillard, Y. Tournié, E. De Giorgi, M. Rainò, G. Salhi, A. Tasco, V. Intartaglia, R. Cingolani, R. Rouillard, Y. Tournié, E. De Giorgi, M. |
|---|---|
| author |
Rainò, G. Salhi, A. Tasco, V. Intartaglia, R. Cingolani, R. Rouillard, Y. Tournié, E. De Giorgi, M. |
| spellingShingle |
Rainò, G. Salhi, A. Tasco, V. Intartaglia, R. Cingolani, R. Rouillard, Y. Tournié, E. De Giorgi, M. Applied Physics Letters Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm Physics and Astronomy (miscellaneous) |
| author_sort |
rainò, g. |
| spelling |
Rainò, G. Salhi, A. Tasco, V. Intartaglia, R. Cingolani, R. Rouillard, Y. Tournié, E. De Giorgi, M. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.2894586 <jats:p>We report the results of an extensive optical investigation by continuous-wave and time resolved photoluminescence experiments on double GaInAsSb∕AlGaAsSb quantum wells emitting at 2.3μm at room temperature. We have found that, at low temperature (&lt;70K), the recombination is dominated by excitons trapped in disorder and interface defects. Whereas, at higher temperature, free-exciton recombination occurs. The observed temperature dependent photoluminescence quenching is ascribed to the ionization of bound exciton at low temperatures, while thermoionic emission of the hole out of the quantum well dominates photoluminescence quenching at high temperatures. The experimental results are supported by theoretical calculations.</jats:p> Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm Applied Physics Letters |
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AIP Publishing, 2008 |
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| title |
Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| title_unstemmed |
Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| title_full |
Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| title_fullStr |
Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| title_full_unstemmed |
Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| title_short |
Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| title_sort |
subpicosecond timescale carrier dynamics in gainassb∕algaassb double quantum wells emitting at 2.3μm |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.2894586 |
| publishDate |
2008 |
| physical |
|
| description |
<jats:p>We report the results of an extensive optical investigation by continuous-wave and time resolved photoluminescence experiments on double GaInAsSb∕AlGaAsSb quantum wells emitting at 2.3μm at room temperature. We have found that, at low temperature (&lt;70K), the recombination is dominated by excitons trapped in disorder and interface defects. Whereas, at higher temperature, free-exciton recombination occurs. The observed temperature dependent photoluminescence quenching is ascribed to the ionization of bound exciton at low temperatures, while thermoionic emission of the hole out of the quantum well dominates photoluminescence quenching at high temperatures. The experimental results are supported by theoretical calculations.</jats:p> |
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| author | Rainò, G., Salhi, A., Tasco, V., Intartaglia, R., Cingolani, R., Rouillard, Y., Tournié, E., De Giorgi, M. |
| author_facet | Rainò, G., Salhi, A., Tasco, V., Intartaglia, R., Cingolani, R., Rouillard, Y., Tournié, E., De Giorgi, M., Rainò, G., Salhi, A., Tasco, V., Intartaglia, R., Cingolani, R., Rouillard, Y., Tournié, E., De Giorgi, M. |
| author_sort | rainò, g. |
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| description | <jats:p>We report the results of an extensive optical investigation by continuous-wave and time resolved photoluminescence experiments on double GaInAsSb∕AlGaAsSb quantum wells emitting at 2.3μm at room temperature. We have found that, at low temperature (&lt;70K), the recombination is dominated by excitons trapped in disorder and interface defects. Whereas, at higher temperature, free-exciton recombination occurs. The observed temperature dependent photoluminescence quenching is ascribed to the ionization of bound exciton at low temperatures, while thermoionic emission of the hole out of the quantum well dominates photoluminescence quenching at high temperatures. The experimental results are supported by theoretical calculations.</jats:p> |
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| spelling | Rainò, G. Salhi, A. Tasco, V. Intartaglia, R. Cingolani, R. Rouillard, Y. Tournié, E. De Giorgi, M. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.2894586 <jats:p>We report the results of an extensive optical investigation by continuous-wave and time resolved photoluminescence experiments on double GaInAsSb∕AlGaAsSb quantum wells emitting at 2.3μm at room temperature. We have found that, at low temperature (&lt;70K), the recombination is dominated by excitons trapped in disorder and interface defects. Whereas, at higher temperature, free-exciton recombination occurs. The observed temperature dependent photoluminescence quenching is ascribed to the ionization of bound exciton at low temperatures, while thermoionic emission of the hole out of the quantum well dominates photoluminescence quenching at high temperatures. The experimental results are supported by theoretical calculations.</jats:p> Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm Applied Physics Letters |
| spellingShingle | Rainò, G., Salhi, A., Tasco, V., Intartaglia, R., Cingolani, R., Rouillard, Y., Tournié, E., De Giorgi, M., Applied Physics Letters, Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm, Physics and Astronomy (miscellaneous) |
| title | Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| title_full | Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| title_fullStr | Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| title_full_unstemmed | Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| title_short | Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| title_sort | subpicosecond timescale carrier dynamics in gainassb∕algaassb double quantum wells emitting at 2.3μm |
| title_unstemmed | Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.2894586 |