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Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , |
| In: | Applied Physics Letters, 74, 1999, 19, S. 2770-2772 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Berger, N. K. Shuker, R. Berger, N. K. Shuker, R. |
|---|---|
| author |
Berger, N. K. Shuker, R. |
| spellingShingle |
Berger, N. K. Shuker, R. Applied Physics Letters Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 Physics and Astronomy (miscellaneous) |
| author_sort |
berger, n. k. |
| spelling |
Berger, N. K. Shuker, R. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.124009 <jats:p>The change in the reflection behavior of VO2 films for the 1.06 μm wavelength at the semiconductor–metal phase transition was investigated. The nonlinearity caused by photoinduced transition was used for phase conjugation of a pulsed Nd:YAG laser. At 60 Hz Q-switching rate and average intensities of the pump and probe waves at 1 and 0.3 W/cm2, respectively, the reflection coefficient of the conjugated wave was ∼1%, the threshold energy density was 8 mJ/cm2, the rise time of the signal was 30 ns. The response rate of the phase conjugation via the VO2 films is discussed.</jats:p> Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 Applied Physics Letters |
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AIP Publishing, 1999 |
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1999 |
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AIP Publishing |
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Applied Physics Letters |
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49 |
| title |
Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| title_unstemmed |
Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| title_full |
Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| title_fullStr |
Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| title_full_unstemmed |
Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| title_short |
Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| title_sort |
time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in vo2 |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.124009 |
| publishDate |
1999 |
| physical |
2770-2772 |
| description |
<jats:p>The change in the reflection behavior of VO2 films for the 1.06 μm wavelength at the semiconductor–metal phase transition was investigated. The nonlinearity caused by photoinduced transition was used for phase conjugation of a pulsed Nd:YAG laser. At 60 Hz Q-switching rate and average intensities of the pump and probe waves at 1 and 0.3 W/cm2, respectively, the reflection coefficient of the conjugated wave was ∼1%, the threshold energy density was 8 mJ/cm2, the rise time of the signal was 30 ns. The response rate of the phase conjugation via the VO2 films is discussed.</jats:p> |
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| author | Berger, N. K., Shuker, R. |
| author_facet | Berger, N. K., Shuker, R., Berger, N. K., Shuker, R. |
| author_sort | berger, n. k. |
| container_issue | 19 |
| container_start_page | 2770 |
| container_title | Applied Physics Letters |
| container_volume | 74 |
| description | <jats:p>The change in the reflection behavior of VO2 films for the 1.06 μm wavelength at the semiconductor–metal phase transition was investigated. The nonlinearity caused by photoinduced transition was used for phase conjugation of a pulsed Nd:YAG laser. At 60 Hz Q-switching rate and average intensities of the pump and probe waves at 1 and 0.3 W/cm2, respectively, the reflection coefficient of the conjugated wave was ∼1%, the threshold energy density was 8 mJ/cm2, the rise time of the signal was 30 ns. The response rate of the phase conjugation via the VO2 films is discussed.</jats:p> |
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| imprint | AIP Publishing, 1999 |
| imprint_str_mv | AIP Publishing, 1999 |
| institution | DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3 |
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| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Berger, N. K. Shuker, R. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.124009 <jats:p>The change in the reflection behavior of VO2 films for the 1.06 μm wavelength at the semiconductor–metal phase transition was investigated. The nonlinearity caused by photoinduced transition was used for phase conjugation of a pulsed Nd:YAG laser. At 60 Hz Q-switching rate and average intensities of the pump and probe waves at 1 and 0.3 W/cm2, respectively, the reflection coefficient of the conjugated wave was ∼1%, the threshold energy density was 8 mJ/cm2, the rise time of the signal was 30 ns. The response rate of the phase conjugation via the VO2 films is discussed.</jats:p> Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 Applied Physics Letters |
| spellingShingle | Berger, N. K., Shuker, R., Applied Physics Letters, Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2, Physics and Astronomy (miscellaneous) |
| title | Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| title_full | Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| title_fullStr | Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| title_full_unstemmed | Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| title_short | Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| title_sort | time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in vo2 |
| title_unstemmed | Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2 |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.124009 |