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New excimer-laser-crystallization method for producing large-grained and grain boundary-location-controlled Si films for thin film transistors
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Journal Title: | Applied Physics Letters |
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Authors and Corporations: | , |
In: | Applied Physics Letters, 68, 1996, 11, p. 1513-1515 |
Type of Resource: | E-Article |
Language: | English |
published: |
AIP Publishing
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Subjects: |