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Technique for junction depth measurement of silicon solar cells
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| Zeitschriftentitel: | Review of Scientific Instruments |
|---|---|
| Personen und Körperschaften: | , |
| In: | Review of Scientific Instruments, 54, 1983, 11, S. 1580-1582 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Biswas, D. Roy, J. B. Biswas, D. Roy, J. B. |
|---|---|
| author |
Biswas, D. Roy, J. B. |
| spellingShingle |
Biswas, D. Roy, J. B. Review of Scientific Instruments Technique for junction depth measurement of silicon solar cells Instrumentation |
| author_sort |
biswas, d. |
| spelling |
Biswas, D. Roy, J. B. 0034-6748 1089-7623 AIP Publishing Instrumentation http://dx.doi.org/10.1063/1.1137270 <jats:p>A new technique for junction depth measurements of silicon solar cells is described. The technique essentially consists of repeated anodization and etching of the surface layer followed by electrical measurements. The advantages of the technique are discussed and illustrative results are presented.</jats:p> Technique for junction depth measurement of silicon solar cells Review of Scientific Instruments |
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AIP Publishing, 1983 |
| imprint_str_mv |
AIP Publishing, 1983 |
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0034-6748 1089-7623 |
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0034-6748 1089-7623 |
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1983 |
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AIP Publishing |
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Review of Scientific Instruments |
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49 |
| title |
Technique for junction depth measurement of silicon solar cells |
| title_unstemmed |
Technique for junction depth measurement of silicon solar cells |
| title_full |
Technique for junction depth measurement of silicon solar cells |
| title_fullStr |
Technique for junction depth measurement of silicon solar cells |
| title_full_unstemmed |
Technique for junction depth measurement of silicon solar cells |
| title_short |
Technique for junction depth measurement of silicon solar cells |
| title_sort |
technique for junction depth measurement of silicon solar cells |
| topic |
Instrumentation |
| url |
http://dx.doi.org/10.1063/1.1137270 |
| publishDate |
1983 |
| physical |
1580-1582 |
| description |
<jats:p>A new technique for junction depth measurements of silicon solar cells is described. The technique essentially consists of repeated anodization and etching of the surface layer followed by electrical measurements. The advantages of the technique are discussed and illustrative results are presented.</jats:p> |
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| author | Biswas, D., Roy, J. B. |
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| container_title | Review of Scientific Instruments |
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| description | <jats:p>A new technique for junction depth measurements of silicon solar cells is described. The technique essentially consists of repeated anodization and etching of the surface layer followed by electrical measurements. The advantages of the technique are discussed and illustrative results are presented.</jats:p> |
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| imprint | AIP Publishing, 1983 |
| imprint_str_mv | AIP Publishing, 1983 |
| institution | DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14 |
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| physical | 1580-1582 |
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| series | Review of Scientific Instruments |
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| spelling | Biswas, D. Roy, J. B. 0034-6748 1089-7623 AIP Publishing Instrumentation http://dx.doi.org/10.1063/1.1137270 <jats:p>A new technique for junction depth measurements of silicon solar cells is described. The technique essentially consists of repeated anodization and etching of the surface layer followed by electrical measurements. The advantages of the technique are discussed and illustrative results are presented.</jats:p> Technique for junction depth measurement of silicon solar cells Review of Scientific Instruments |
| spellingShingle | Biswas, D., Roy, J. B., Review of Scientific Instruments, Technique for junction depth measurement of silicon solar cells, Instrumentation |
| title | Technique for junction depth measurement of silicon solar cells |
| title_full | Technique for junction depth measurement of silicon solar cells |
| title_fullStr | Technique for junction depth measurement of silicon solar cells |
| title_full_unstemmed | Technique for junction depth measurement of silicon solar cells |
| title_short | Technique for junction depth measurement of silicon solar cells |
| title_sort | technique for junction depth measurement of silicon solar cells |
| title_unstemmed | Technique for junction depth measurement of silicon solar cells |
| topic | Instrumentation |
| url | http://dx.doi.org/10.1063/1.1137270 |