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Exciton and biexciton recombination in semiconductor nanocrystals
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , |
| In: | Applied Physics Letters, 65, 1994, 9, S. 1151-1153 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Zheng, J. P. Kwok, H. S. Zheng, J. P. Kwok, H. S. |
|---|---|
| author |
Zheng, J. P. Kwok, H. S. |
| spellingShingle |
Zheng, J. P. Kwok, H. S. Applied Physics Letters Exciton and biexciton recombination in semiconductor nanocrystals Physics and Astronomy (miscellaneous) |
| author_sort |
zheng, j. p. |
| spelling |
Zheng, J. P. Kwok, H. S. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.112125 <jats:p>The time-resolved photoluminescence of semiconductor nanocrystals was obtained as a function of laser excitation intensity at a low temperature. Exciton and biexciton recombination processes were clearly identified. At laser intensities lower than 3.3×105 W/cm2, only exciton recombination with a lifetime of 4 ns was obtained. At higher laser intensities, biexciton recombination with a lifetime of 1 ns appeared. At laser intensities above 106 W/cm2, recombination of electron-hole plasma occurred with a much shorter lifetime.</jats:p> Exciton and biexciton recombination in semiconductor nanocrystals Applied Physics Letters |
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AIP Publishing, 1994 |
| imprint_str_mv |
AIP Publishing, 1994 |
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0003-6951 1077-3118 |
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1994 |
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AIP Publishing |
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Applied Physics Letters |
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49 |
| title |
Exciton and biexciton recombination in semiconductor nanocrystals |
| title_unstemmed |
Exciton and biexciton recombination in semiconductor nanocrystals |
| title_full |
Exciton and biexciton recombination in semiconductor nanocrystals |
| title_fullStr |
Exciton and biexciton recombination in semiconductor nanocrystals |
| title_full_unstemmed |
Exciton and biexciton recombination in semiconductor nanocrystals |
| title_short |
Exciton and biexciton recombination in semiconductor nanocrystals |
| title_sort |
exciton and biexciton recombination in semiconductor nanocrystals |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.112125 |
| publishDate |
1994 |
| physical |
1151-1153 |
| description |
<jats:p>The time-resolved photoluminescence of semiconductor nanocrystals was obtained as a function of laser excitation intensity at a low temperature. Exciton and biexciton recombination processes were clearly identified. At laser intensities lower than 3.3×105 W/cm2, only exciton recombination with a lifetime of 4 ns was obtained. At higher laser intensities, biexciton recombination with a lifetime of 1 ns appeared. At laser intensities above 106 W/cm2, recombination of electron-hole plasma occurred with a much shorter lifetime.</jats:p> |
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| author | Zheng, J. P., Kwok, H. S. |
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| author_sort | zheng, j. p. |
| container_issue | 9 |
| container_start_page | 1151 |
| container_title | Applied Physics Letters |
| container_volume | 65 |
| description | <jats:p>The time-resolved photoluminescence of semiconductor nanocrystals was obtained as a function of laser excitation intensity at a low temperature. Exciton and biexciton recombination processes were clearly identified. At laser intensities lower than 3.3×105 W/cm2, only exciton recombination with a lifetime of 4 ns was obtained. At higher laser intensities, biexciton recombination with a lifetime of 1 ns appeared. At laser intensities above 106 W/cm2, recombination of electron-hole plasma occurred with a much shorter lifetime.</jats:p> |
| doi_str_mv | 10.1063/1.112125 |
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| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjExMjEyNQ |
| imprint | AIP Publishing, 1994 |
| imprint_str_mv | AIP Publishing, 1994 |
| institution | DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275 |
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| physical | 1151-1153 |
| publishDate | 1994 |
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| publisher | AIP Publishing |
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| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Zheng, J. P. Kwok, H. S. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.112125 <jats:p>The time-resolved photoluminescence of semiconductor nanocrystals was obtained as a function of laser excitation intensity at a low temperature. Exciton and biexciton recombination processes were clearly identified. At laser intensities lower than 3.3×105 W/cm2, only exciton recombination with a lifetime of 4 ns was obtained. At higher laser intensities, biexciton recombination with a lifetime of 1 ns appeared. At laser intensities above 106 W/cm2, recombination of electron-hole plasma occurred with a much shorter lifetime.</jats:p> Exciton and biexciton recombination in semiconductor nanocrystals Applied Physics Letters |
| spellingShingle | Zheng, J. P., Kwok, H. S., Applied Physics Letters, Exciton and biexciton recombination in semiconductor nanocrystals, Physics and Astronomy (miscellaneous) |
| title | Exciton and biexciton recombination in semiconductor nanocrystals |
| title_full | Exciton and biexciton recombination in semiconductor nanocrystals |
| title_fullStr | Exciton and biexciton recombination in semiconductor nanocrystals |
| title_full_unstemmed | Exciton and biexciton recombination in semiconductor nanocrystals |
| title_short | Exciton and biexciton recombination in semiconductor nanocrystals |
| title_sort | exciton and biexciton recombination in semiconductor nanocrystals |
| title_unstemmed | Exciton and biexciton recombination in semiconductor nanocrystals |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.112125 |