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Velocity electric field relationship for minority electrons in highly doped p-GaAs
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , |
| In: | Applied Physics Letters, 56, 1990, 9, S. 824-826 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Furuta, T. Tomizawa, M. Furuta, T. Tomizawa, M. |
|---|---|
| author |
Furuta, T. Tomizawa, M. |
| spellingShingle |
Furuta, T. Tomizawa, M. Applied Physics Letters Velocity electric field relationship for minority electrons in highly doped p-GaAs Physics and Astronomy (miscellaneous) |
| author_sort |
furuta, t. |
| spelling |
Furuta, T. Tomizawa, M. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.102674 <jats:p>Using the time-of-flight method, the drift velocity for minority electrons in highly doped p-GaAs was successfully measured at room temperature. The obtained velocity electric field relationships indicate that the velocity does not decrease but slightly increases and then saturates with increasing hole concentration above 1×1019 cm−3. Such behavior is well explained by the effects of degeneracy, which reduces the electron-hole interaction, and the hole distribution function dependence on electric field from the Monte Carlo calculation.</jats:p> Velocity electric field relationship for minority electrons in highly doped <i>p</i>-GaAs Applied Physics Letters |
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10.1063/1.102674 |
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AIP Publishing, 1990 |
| imprint_str_mv |
AIP Publishing, 1990 |
| issn |
0003-6951 1077-3118 |
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0003-6951 1077-3118 |
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1990 |
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AIP Publishing |
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ai |
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ai |
| series |
Applied Physics Letters |
| source_id |
49 |
| title |
Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| title_unstemmed |
Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| title_full |
Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| title_fullStr |
Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| title_full_unstemmed |
Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| title_short |
Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| title_sort |
velocity electric field relationship for minority electrons in highly doped <i>p</i>-gaas |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.102674 |
| publishDate |
1990 |
| physical |
824-826 |
| description |
<jats:p>Using the time-of-flight method, the drift velocity for minority electrons in highly doped p-GaAs was successfully measured at room temperature. The obtained velocity electric field relationships indicate that the velocity does not decrease but slightly increases and then saturates with increasing hole concentration above 1×1019 cm−3. Such behavior is well explained by the effects of degeneracy, which reduces the electron-hole interaction, and the hole distribution function dependence on electric field from the Monte Carlo calculation.</jats:p> |
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| author | Furuta, T., Tomizawa, M. |
| author_facet | Furuta, T., Tomizawa, M., Furuta, T., Tomizawa, M. |
| author_sort | furuta, t. |
| container_issue | 9 |
| container_start_page | 824 |
| container_title | Applied Physics Letters |
| container_volume | 56 |
| description | <jats:p>Using the time-of-flight method, the drift velocity for minority electrons in highly doped p-GaAs was successfully measured at room temperature. The obtained velocity electric field relationships indicate that the velocity does not decrease but slightly increases and then saturates with increasing hole concentration above 1×1019 cm−3. Such behavior is well explained by the effects of degeneracy, which reduces the electron-hole interaction, and the hole distribution function dependence on electric field from the Monte Carlo calculation.</jats:p> |
| doi_str_mv | 10.1063/1.102674 |
| facet_avail | Online |
| finc_class_facet | Physik |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
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| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjEwMjY3NA |
| imprint | AIP Publishing, 1990 |
| imprint_str_mv | AIP Publishing, 1990 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
| issn | 0003-6951, 1077-3118 |
| issn_str_mv | 0003-6951, 1077-3118 |
| language | English |
| last_indexed | 2024-03-01T17:41:04.53Z |
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| physical | 824-826 |
| publishDate | 1990 |
| publishDateSort | 1990 |
| publisher | AIP Publishing |
| record_format | ai |
| recordtype | ai |
| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Furuta, T. Tomizawa, M. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.102674 <jats:p>Using the time-of-flight method, the drift velocity for minority electrons in highly doped p-GaAs was successfully measured at room temperature. The obtained velocity electric field relationships indicate that the velocity does not decrease but slightly increases and then saturates with increasing hole concentration above 1×1019 cm−3. Such behavior is well explained by the effects of degeneracy, which reduces the electron-hole interaction, and the hole distribution function dependence on electric field from the Monte Carlo calculation.</jats:p> Velocity electric field relationship for minority electrons in highly doped <i>p</i>-GaAs Applied Physics Letters |
| spellingShingle | Furuta, T., Tomizawa, M., Applied Physics Letters, Velocity electric field relationship for minority electrons in highly doped p-GaAs, Physics and Astronomy (miscellaneous) |
| title | Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| title_full | Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| title_fullStr | Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| title_full_unstemmed | Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| title_short | Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| title_sort | velocity electric field relationship for minority electrons in highly doped <i>p</i>-gaas |
| title_unstemmed | Velocity electric field relationship for minority electrons in highly doped p-GaAs |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.102674 |