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Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , , |
| In: | Applied Physics Letters, 56, 1990, 13, S. 1269-1271 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Gaskill, D. K. Bottka, N. Aina, L. Mattingly, M. Gaskill, D. K. Bottka, N. Aina, L. Mattingly, M. |
|---|---|
| author |
Gaskill, D. K. Bottka, N. Aina, L. Mattingly, M. |
| spellingShingle |
Gaskill, D. K. Bottka, N. Aina, L. Mattingly, M. Applied Physics Letters Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP Physics and Astronomy (miscellaneous) |
| author_sort |
gaskill, d. k. |
| spelling |
Gaskill, D. K. Bottka, N. Aina, L. Mattingly, M. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.102533 <jats:p>Photoreflectance-derived band-gap parameters as a function of temperature for InGaAs and InAlAs lattice matched to InP are reported. The experiment was performed on a set of samples of various compositions (and strains) yielding greater reliability and ensuring self-consistency. For InGaAs, fits to the Varshni equation gave E0(T=0 K)=803 meV, α=4.0×10−4 eV K−1, and β=226 K. For InAlAs, E0(T=0 K)=1.541 eV, α=4.7×10−4 eV K−1, β=149 K, and Δ0=338 meV.</jats:p> Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP Applied Physics Letters |
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AIP Publishing, 1990 |
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AIP Publishing, 1990 |
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0003-6951 1077-3118 |
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1990 |
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Applied Physics Letters |
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| title |
Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| title_unstemmed |
Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| title_full |
Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| title_fullStr |
Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| title_full_unstemmed |
Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| title_short |
Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| title_sort |
band-gap determination by photoreflectance of ingaas and inalas lattice matched to inp |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.102533 |
| publishDate |
1990 |
| physical |
1269-1271 |
| description |
<jats:p>Photoreflectance-derived band-gap parameters as a function of temperature for InGaAs and InAlAs lattice matched to InP are reported. The experiment was performed on a set of samples of various compositions (and strains) yielding greater reliability and ensuring self-consistency. For InGaAs, fits to the Varshni equation gave E0(T=0 K)=803 meV, α=4.0×10−4 eV K−1, and β=226 K. For InAlAs, E0(T=0 K)=1.541 eV, α=4.7×10−4 eV K−1, β=149 K, and Δ0=338 meV.</jats:p> |
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| author | Gaskill, D. K., Bottka, N., Aina, L., Mattingly, M. |
| author_facet | Gaskill, D. K., Bottka, N., Aina, L., Mattingly, M., Gaskill, D. K., Bottka, N., Aina, L., Mattingly, M. |
| author_sort | gaskill, d. k. |
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| container_start_page | 1269 |
| container_title | Applied Physics Letters |
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| description | <jats:p>Photoreflectance-derived band-gap parameters as a function of temperature for InGaAs and InAlAs lattice matched to InP are reported. The experiment was performed on a set of samples of various compositions (and strains) yielding greater reliability and ensuring self-consistency. For InGaAs, fits to the Varshni equation gave E0(T=0 K)=803 meV, α=4.0×10−4 eV K−1, and β=226 K. For InAlAs, E0(T=0 K)=1.541 eV, α=4.7×10−4 eV K−1, β=149 K, and Δ0=338 meV.</jats:p> |
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| imprint | AIP Publishing, 1990 |
| imprint_str_mv | AIP Publishing, 1990 |
| institution | DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161 |
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| physical | 1269-1271 |
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| publishDateSort | 1990 |
| publisher | AIP Publishing |
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| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Gaskill, D. K. Bottka, N. Aina, L. Mattingly, M. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.102533 <jats:p>Photoreflectance-derived band-gap parameters as a function of temperature for InGaAs and InAlAs lattice matched to InP are reported. The experiment was performed on a set of samples of various compositions (and strains) yielding greater reliability and ensuring self-consistency. For InGaAs, fits to the Varshni equation gave E0(T=0 K)=803 meV, α=4.0×10−4 eV K−1, and β=226 K. For InAlAs, E0(T=0 K)=1.541 eV, α=4.7×10−4 eV K−1, β=149 K, and Δ0=338 meV.</jats:p> Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP Applied Physics Letters |
| spellingShingle | Gaskill, D. K., Bottka, N., Aina, L., Mattingly, M., Applied Physics Letters, Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP, Physics and Astronomy (miscellaneous) |
| title | Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| title_full | Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| title_fullStr | Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| title_full_unstemmed | Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| title_short | Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| title_sort | band-gap determination by photoreflectance of ingaas and inalas lattice matched to inp |
| title_unstemmed | Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.102533 |