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Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , |
| In: | Applied Physics Letters, 53, 1988, 16, S. 1512-1514 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Blunier, S. Zogg, H. Weibel, H. Blunier, S. Zogg, H. Weibel, H. |
|---|---|
| author |
Blunier, S. Zogg, H. Weibel, H. |
| spellingShingle |
Blunier, S. Zogg, H. Weibel, H. Applied Physics Letters Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates Physics and Astronomy (miscellaneous) |
| author_sort |
blunier, s. |
| spelling |
Blunier, S. Zogg, H. Weibel, H. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.100432 <jats:p>(100) oriented BaF2 has been grown epitaxially onto Si(100) despite its large lattice mismatch of 14% and preferred (111) growth mode. (100) epitaxy was achieved using thin intermediate CaF2 and/or SrF2 buffers to overcome the mismatch in a stepwise manner. Growth is three dimensional, and a roughness of the top surface in the 10 nm range was obtained. Ion channeling minimum yields are below 4% even for layers as thin as 3000 Å. Thermal misfit strains relieve due to movement of misfit dislocations. The layers are intended for use as epitaxial buffers for growth of compound semiconductors on Si(100) substrates with up to 20% total lattice mismatch.</jats:p> Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates Applied Physics Letters |
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10.1063/1.100432 |
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AIP Publishing, 1988 |
| imprint_str_mv |
AIP Publishing, 1988 |
| issn |
0003-6951 1077-3118 |
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0003-6951 1077-3118 |
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1988 |
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AIP Publishing |
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Applied Physics Letters |
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49 |
| title |
Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| title_unstemmed |
Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| title_full |
Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| title_fullStr |
Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| title_full_unstemmed |
Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| title_short |
Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| title_sort |
growth of lattice-mismatched stacked epitaxial caf2-srf2-baf2 layers on (100) oriented si substrates |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.100432 |
| publishDate |
1988 |
| physical |
1512-1514 |
| description |
<jats:p>(100) oriented BaF2 has been grown epitaxially onto Si(100) despite its large lattice mismatch of 14% and preferred (111) growth mode. (100) epitaxy was achieved using thin intermediate CaF2 and/or SrF2 buffers to overcome the mismatch in a stepwise manner. Growth is three dimensional, and a roughness of the top surface in the 10 nm range was obtained. Ion channeling minimum yields are below 4% even for layers as thin as 3000 Å. Thermal misfit strains relieve due to movement of misfit dislocations. The layers are intended for use as epitaxial buffers for growth of compound semiconductors on Si(100) substrates with up to 20% total lattice mismatch.</jats:p> |
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| author | Blunier, S., Zogg, H., Weibel, H. |
| author_facet | Blunier, S., Zogg, H., Weibel, H., Blunier, S., Zogg, H., Weibel, H. |
| author_sort | blunier, s. |
| container_issue | 16 |
| container_start_page | 1512 |
| container_title | Applied Physics Letters |
| container_volume | 53 |
| description | <jats:p>(100) oriented BaF2 has been grown epitaxially onto Si(100) despite its large lattice mismatch of 14% and preferred (111) growth mode. (100) epitaxy was achieved using thin intermediate CaF2 and/or SrF2 buffers to overcome the mismatch in a stepwise manner. Growth is three dimensional, and a roughness of the top surface in the 10 nm range was obtained. Ion channeling minimum yields are below 4% even for layers as thin as 3000 Å. Thermal misfit strains relieve due to movement of misfit dislocations. The layers are intended for use as epitaxial buffers for growth of compound semiconductors on Si(100) substrates with up to 20% total lattice mismatch.</jats:p> |
| doi_str_mv | 10.1063/1.100432 |
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| imprint | AIP Publishing, 1988 |
| imprint_str_mv | AIP Publishing, 1988 |
| institution | DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Rs1, DE-Pl11, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275 |
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| physical | 1512-1514 |
| publishDate | 1988 |
| publishDateSort | 1988 |
| publisher | AIP Publishing |
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| recordtype | ai |
| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Blunier, S. Zogg, H. Weibel, H. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.100432 <jats:p>(100) oriented BaF2 has been grown epitaxially onto Si(100) despite its large lattice mismatch of 14% and preferred (111) growth mode. (100) epitaxy was achieved using thin intermediate CaF2 and/or SrF2 buffers to overcome the mismatch in a stepwise manner. Growth is three dimensional, and a roughness of the top surface in the 10 nm range was obtained. Ion channeling minimum yields are below 4% even for layers as thin as 3000 Å. Thermal misfit strains relieve due to movement of misfit dislocations. The layers are intended for use as epitaxial buffers for growth of compound semiconductors on Si(100) substrates with up to 20% total lattice mismatch.</jats:p> Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates Applied Physics Letters |
| spellingShingle | Blunier, S., Zogg, H., Weibel, H., Applied Physics Letters, Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates, Physics and Astronomy (miscellaneous) |
| title | Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| title_full | Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| title_fullStr | Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| title_full_unstemmed | Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| title_short | Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| title_sort | growth of lattice-mismatched stacked epitaxial caf2-srf2-baf2 layers on (100) oriented si substrates |
| title_unstemmed | Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.100432 |