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Electroluminescence from metal/oxide/strained-Si tunneling diodes
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , , , |
| In: | Applied Physics Letters, 86, 2005, 22 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Liao, M. H. Chen, M.-J. Chen, T. C. Wang, P.-L. Liu, C. W. Liao, M. H. Chen, M.-J. Chen, T. C. Wang, P.-L. Liu, C. W. |
|---|---|
| author |
Liao, M. H. Chen, M.-J. Chen, T. C. Wang, P.-L. Liu, C. W. |
| spellingShingle |
Liao, M. H. Chen, M.-J. Chen, T. C. Wang, P.-L. Liu, C. W. Applied Physics Letters Electroluminescence from metal/oxide/strained-Si tunneling diodes Physics and Astronomy (miscellaneous) |
| author_sort |
liao, m. h. |
| spelling |
Liao, M. H. Chen, M.-J. Chen, T. C. Wang, P.-L. Liu, C. W. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.1937989 <jats:p>The metal-oxide-silicon light-emitting diode under biaxial tensile mechanical strain is studied. The emission line shape of the device can be fitted by the electron-hole-plasma recombination model. The energy gap of strained Si extracted by the light emission spectra at the temperature of 120 K is reduced by 15 meV under 0.13% biaxial tensile strain. The light intensity of the device under 0.13% biaxial tensile strain increases 9% as compared to the relaxed-Si device. The upshift of valence band edge under mechanical strain to increase the majority hole concentration at the oxide∕Si interface may be responsible for this light emission enhancement. The mechanical strain is measured by Raman spectroscopy, strain gauge, and analyzed by the finite element method.</jats:p> Electroluminescence from metal/oxide/strained-Si tunneling diodes Applied Physics Letters |
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Applied Physics Letters |
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| title |
Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| title_unstemmed |
Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| title_full |
Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| title_fullStr |
Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| title_full_unstemmed |
Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| title_short |
Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| title_sort |
electroluminescence from metal/oxide/strained-si tunneling diodes |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.1937989 |
| publishDate |
2005 |
| physical |
|
| description |
<jats:p>The metal-oxide-silicon light-emitting diode under biaxial tensile mechanical strain is studied. The emission line shape of the device can be fitted by the electron-hole-plasma recombination model. The energy gap of strained Si extracted by the light emission spectra at the temperature of 120 K is reduced by 15 meV under 0.13% biaxial tensile strain. The light intensity of the device under 0.13% biaxial tensile strain increases 9% as compared to the relaxed-Si device. The upshift of valence band edge under mechanical strain to increase the majority hole concentration at the oxide∕Si interface may be responsible for this light emission enhancement. The mechanical strain is measured by Raman spectroscopy, strain gauge, and analyzed by the finite element method.</jats:p> |
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| author | Liao, M. H., Chen, M.-J., Chen, T. C., Wang, P.-L., Liu, C. W. |
| author_facet | Liao, M. H., Chen, M.-J., Chen, T. C., Wang, P.-L., Liu, C. W., Liao, M. H., Chen, M.-J., Chen, T. C., Wang, P.-L., Liu, C. W. |
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| description | <jats:p>The metal-oxide-silicon light-emitting diode under biaxial tensile mechanical strain is studied. The emission line shape of the device can be fitted by the electron-hole-plasma recombination model. The energy gap of strained Si extracted by the light emission spectra at the temperature of 120 K is reduced by 15 meV under 0.13% biaxial tensile strain. The light intensity of the device under 0.13% biaxial tensile strain increases 9% as compared to the relaxed-Si device. The upshift of valence band edge under mechanical strain to increase the majority hole concentration at the oxide∕Si interface may be responsible for this light emission enhancement. The mechanical strain is measured by Raman spectroscopy, strain gauge, and analyzed by the finite element method.</jats:p> |
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| spelling | Liao, M. H. Chen, M.-J. Chen, T. C. Wang, P.-L. Liu, C. W. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.1937989 <jats:p>The metal-oxide-silicon light-emitting diode under biaxial tensile mechanical strain is studied. The emission line shape of the device can be fitted by the electron-hole-plasma recombination model. The energy gap of strained Si extracted by the light emission spectra at the temperature of 120 K is reduced by 15 meV under 0.13% biaxial tensile strain. The light intensity of the device under 0.13% biaxial tensile strain increases 9% as compared to the relaxed-Si device. The upshift of valence band edge under mechanical strain to increase the majority hole concentration at the oxide∕Si interface may be responsible for this light emission enhancement. The mechanical strain is measured by Raman spectroscopy, strain gauge, and analyzed by the finite element method.</jats:p> Electroluminescence from metal/oxide/strained-Si tunneling diodes Applied Physics Letters |
| spellingShingle | Liao, M. H., Chen, M.-J., Chen, T. C., Wang, P.-L., Liu, C. W., Applied Physics Letters, Electroluminescence from metal/oxide/strained-Si tunneling diodes, Physics and Astronomy (miscellaneous) |
| title | Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| title_full | Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| title_fullStr | Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| title_full_unstemmed | Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| title_short | Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| title_sort | electroluminescence from metal/oxide/strained-si tunneling diodes |
| title_unstemmed | Electroluminescence from metal/oxide/strained-Si tunneling diodes |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.1937989 |