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Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique
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| Zeitschriftentitel: | Journal of Applied Physics |
|---|---|
| Personen und Körperschaften: | , , , , , , , , , , , |
| In: | Journal of Applied Physics, 97, 2005, 7 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Pernegger, H. Roe, S. Weilhammer, P. Eremin, V. Frais-Kölbl, H. Griesmayer, E. Kagan, H. Schnetzer, S. Stone, R. Trischuk, W. Twitchen, D. Whitehead, A. Pernegger, H. Roe, S. Weilhammer, P. Eremin, V. Frais-Kölbl, H. Griesmayer, E. Kagan, H. Schnetzer, S. Stone, R. Trischuk, W. Twitchen, D. Whitehead, A. |
|---|---|
| author |
Pernegger, H. Roe, S. Weilhammer, P. Eremin, V. Frais-Kölbl, H. Griesmayer, E. Kagan, H. Schnetzer, S. Stone, R. Trischuk, W. Twitchen, D. Whitehead, A. |
| spellingShingle |
Pernegger, H. Roe, S. Weilhammer, P. Eremin, V. Frais-Kölbl, H. Griesmayer, E. Kagan, H. Schnetzer, S. Stone, R. Trischuk, W. Twitchen, D. Whitehead, A. Journal of Applied Physics Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique General Physics and Astronomy |
| author_sort |
pernegger, h. |
| spelling |
Pernegger, H. Roe, S. Weilhammer, P. Eremin, V. Frais-Kölbl, H. Griesmayer, E. Kagan, H. Schnetzer, S. Stone, R. Trischuk, W. Twitchen, D. Whitehead, A. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.1863417 <jats:p>For optimal operation of chemical-vapor deposition (CVD) diamonds as charged particle detectors it is important to have a detailed understanding of the charge-carrier transport mechanism. This includes the determination of electron and hole drift velocities as a function of electric field, charge carrier lifetimes, as well as effective concentration of space charge in the detector bulk. We use the transient-current technique, which allows a direct determination of these parameters in a single measurement, to investigate the charge-carrier properties in a sample of single-crystal CVD diamond. The method is based on the injection of charge using an α source close to the surface and measuring the induced current in the detector electrodes as a function of time.</jats:p> Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique Journal of Applied Physics |
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| title |
Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_unstemmed |
Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_full |
Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_fullStr |
Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_full_unstemmed |
Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_short |
Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_sort |
charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| topic |
General Physics and Astronomy |
| url |
http://dx.doi.org/10.1063/1.1863417 |
| publishDate |
2005 |
| physical |
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| description |
<jats:p>For optimal operation of chemical-vapor deposition (CVD) diamonds as charged particle detectors it is important to have a detailed understanding of the charge-carrier transport mechanism. This includes the determination of electron and hole drift velocities as a function of electric field, charge carrier lifetimes, as well as effective concentration of space charge in the detector bulk. We use the transient-current technique, which allows a direct determination of these parameters in a single measurement, to investigate the charge-carrier properties in a sample of single-crystal CVD diamond. The method is based on the injection of charge using an α source close to the surface and measuring the induced current in the detector electrodes as a function of time.</jats:p> |
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| author | Pernegger, H., Roe, S., Weilhammer, P., Eremin, V., Frais-Kölbl, H., Griesmayer, E., Kagan, H., Schnetzer, S., Stone, R., Trischuk, W., Twitchen, D., Whitehead, A. |
| author_facet | Pernegger, H., Roe, S., Weilhammer, P., Eremin, V., Frais-Kölbl, H., Griesmayer, E., Kagan, H., Schnetzer, S., Stone, R., Trischuk, W., Twitchen, D., Whitehead, A., Pernegger, H., Roe, S., Weilhammer, P., Eremin, V., Frais-Kölbl, H., Griesmayer, E., Kagan, H., Schnetzer, S., Stone, R., Trischuk, W., Twitchen, D., Whitehead, A. |
| author_sort | pernegger, h. |
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| description | <jats:p>For optimal operation of chemical-vapor deposition (CVD) diamonds as charged particle detectors it is important to have a detailed understanding of the charge-carrier transport mechanism. This includes the determination of electron and hole drift velocities as a function of electric field, charge carrier lifetimes, as well as effective concentration of space charge in the detector bulk. We use the transient-current technique, which allows a direct determination of these parameters in a single measurement, to investigate the charge-carrier properties in a sample of single-crystal CVD diamond. The method is based on the injection of charge using an α source close to the surface and measuring the induced current in the detector electrodes as a function of time.</jats:p> |
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| spelling | Pernegger, H. Roe, S. Weilhammer, P. Eremin, V. Frais-Kölbl, H. Griesmayer, E. Kagan, H. Schnetzer, S. Stone, R. Trischuk, W. Twitchen, D. Whitehead, A. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.1863417 <jats:p>For optimal operation of chemical-vapor deposition (CVD) diamonds as charged particle detectors it is important to have a detailed understanding of the charge-carrier transport mechanism. This includes the determination of electron and hole drift velocities as a function of electric field, charge carrier lifetimes, as well as effective concentration of space charge in the detector bulk. We use the transient-current technique, which allows a direct determination of these parameters in a single measurement, to investigate the charge-carrier properties in a sample of single-crystal CVD diamond. The method is based on the injection of charge using an α source close to the surface and measuring the induced current in the detector electrodes as a function of time.</jats:p> Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique Journal of Applied Physics |
| spellingShingle | Pernegger, H., Roe, S., Weilhammer, P., Eremin, V., Frais-Kölbl, H., Griesmayer, E., Kagan, H., Schnetzer, S., Stone, R., Trischuk, W., Twitchen, D., Whitehead, A., Journal of Applied Physics, Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique, General Physics and Astronomy |
| title | Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_full | Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_fullStr | Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_full_unstemmed | Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_short | Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_sort | charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| title_unstemmed | Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique |
| topic | General Physics and Astronomy |
| url | http://dx.doi.org/10.1063/1.1863417 |