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Ballistic transport in silicon vertical transistors
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| Zeitschriftentitel: | Journal of Applied Physics |
|---|---|
| Personen und Körperschaften: | , |
| In: | Journal of Applied Physics, 92, 2002, 3, S. 1399-1405 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
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Nishiguchi, K. Oda, S. Nishiguchi, K. Oda, S. |
|---|---|
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Nishiguchi, K. Oda, S. |
| spellingShingle |
Nishiguchi, K. Oda, S. Journal of Applied Physics Ballistic transport in silicon vertical transistors General Physics and Astronomy |
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nishiguchi, k. |
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Nishiguchi, K. Oda, S. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.1489496 <jats:p>Clear evidence for ballistic transport has been observed at 5 K from silicon vertical transistors with wrap around gates. The effect of channel shape was investigated experimentally and accounted for theoretically by the anisotropy of the Si conduction band. A reduction in conductance and the appearance of multiple steps were observed when a magnetic field was applied perpendicular to the channel. These results were successfully modeled within the effective mass approximation by including the magnetic vector potential and effects due to series resistance and the spin and valley degeneracy.</jats:p> Ballistic transport in silicon vertical transistors Journal of Applied Physics |
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Ballistic transport in silicon vertical transistors |
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Ballistic transport in silicon vertical transistors |
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Ballistic transport in silicon vertical transistors |
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Ballistic transport in silicon vertical transistors |
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Ballistic transport in silicon vertical transistors |
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ballistic transport in silicon vertical transistors |
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General Physics and Astronomy |
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http://dx.doi.org/10.1063/1.1489496 |
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2002 |
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1399-1405 |
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<jats:p>Clear evidence for ballistic transport has been observed at 5 K from silicon vertical transistors with wrap around gates. The effect of channel shape was investigated experimentally and accounted for theoretically by the anisotropy of the Si conduction band. A reduction in conductance and the appearance of multiple steps were observed when a magnetic field was applied perpendicular to the channel. These results were successfully modeled within the effective mass approximation by including the magnetic vector potential and effects due to series resistance and the spin and valley degeneracy.</jats:p> |
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| author | Nishiguchi, K., Oda, S. |
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| description | <jats:p>Clear evidence for ballistic transport has been observed at 5 K from silicon vertical transistors with wrap around gates. The effect of channel shape was investigated experimentally and accounted for theoretically by the anisotropy of the Si conduction band. A reduction in conductance and the appearance of multiple steps were observed when a magnetic field was applied perpendicular to the channel. These results were successfully modeled within the effective mass approximation by including the magnetic vector potential and effects due to series resistance and the spin and valley degeneracy.</jats:p> |
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| spelling | Nishiguchi, K. Oda, S. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.1489496 <jats:p>Clear evidence for ballistic transport has been observed at 5 K from silicon vertical transistors with wrap around gates. The effect of channel shape was investigated experimentally and accounted for theoretically by the anisotropy of the Si conduction band. A reduction in conductance and the appearance of multiple steps were observed when a magnetic field was applied perpendicular to the channel. These results were successfully modeled within the effective mass approximation by including the magnetic vector potential and effects due to series resistance and the spin and valley degeneracy.</jats:p> Ballistic transport in silicon vertical transistors Journal of Applied Physics |
| spellingShingle | Nishiguchi, K., Oda, S., Journal of Applied Physics, Ballistic transport in silicon vertical transistors, General Physics and Astronomy |
| title | Ballistic transport in silicon vertical transistors |
| title_full | Ballistic transport in silicon vertical transistors |
| title_fullStr | Ballistic transport in silicon vertical transistors |
| title_full_unstemmed | Ballistic transport in silicon vertical transistors |
| title_short | Ballistic transport in silicon vertical transistors |
| title_sort | ballistic transport in silicon vertical transistors |
| title_unstemmed | Ballistic transport in silicon vertical transistors |
| topic | General Physics and Astronomy |
| url | http://dx.doi.org/10.1063/1.1489496 |