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Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility
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Journal Title: | Applied Physics Letters |
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Authors and Corporations: | , , |
In: | Applied Physics Letters, 80, 2002, 22, p. 4160-4162 |
Type of Resource: | E-Article |
Language: | English |
published: |
AIP Publishing
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Subjects: |