Eintrag weiter verarbeiten
Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility
Gespeichert in:
| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , |
| In: | Applied Physics Letters, 80, 2002, 22, S. 4160-4162 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Gámiz, F. Roldán, J. B. Godoy, A. Gámiz, F. Roldán, J. B. Godoy, A. |
|---|---|
| author |
Gámiz, F. Roldán, J. B. Godoy, A. |
| spellingShingle |
Gámiz, F. Roldán, J. B. Godoy, A. Applied Physics Letters Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility Physics and Astronomy (miscellaneous) |
| author_sort |
gámiz, f. |
| spelling |
Gámiz, F. Roldán, J. B. Godoy, A. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.1483907 <jats:p>We show by Monte Carlo simulation that electron mobility is greater when strained-silicon inversion layers are grown on SiGe-on-insulator substrates than when unstrained-silicon-on-insulator devices are employed (as experimentally observed). However, the electron mobility in strained-Si/SiGe-on-insulator inversion layers is strongly dependent on the strained-silicon layer thickness, TSi, due to an increase of the phonon scattering, which partially counteracts the increase in the mobility achieved by the strain. This effect is less important as the germanium mole fraction, x, is reduced, and as the value of TSi increases.</jats:p> Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility Applied Physics Letters |
| doi_str_mv |
10.1063/1.1483907 |
| facet_avail |
Online |
| finc_class_facet |
Physik |
| format |
ElectronicArticle |
| fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjE0ODM5MDc |
| id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjE0ODM5MDc |
| institution |
DE-15 DE-Pl11 DE-Rs1 DE-105 DE-14 DE-Ch1 DE-L229 DE-D275 DE-Bn3 DE-Brt1 DE-D161 DE-Gla1 DE-Zi4 |
| imprint |
AIP Publishing, 2002 |
| imprint_str_mv |
AIP Publishing, 2002 |
| issn |
1077-3118 0003-6951 |
| issn_str_mv |
1077-3118 0003-6951 |
| language |
English |
| mega_collection |
AIP Publishing (CrossRef) |
| match_str |
gamiz2002strainedsisigeoninsulatorinversionlayerstheroleofstrainedsilayerthicknessonelectronmobility |
| publishDateSort |
2002 |
| publisher |
AIP Publishing |
| recordtype |
ai |
| record_format |
ai |
| series |
Applied Physics Letters |
| source_id |
49 |
| title |
Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| title_unstemmed |
Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| title_full |
Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| title_fullStr |
Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| title_full_unstemmed |
Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| title_short |
Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| title_sort |
strained-si/sige-on-insulator inversion layers: the role of strained-si layer thickness on electron mobility |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.1483907 |
| publishDate |
2002 |
| physical |
4160-4162 |
| description |
<jats:p>We show by Monte Carlo simulation that electron mobility is greater when strained-silicon inversion layers are grown on SiGe-on-insulator substrates than when unstrained-silicon-on-insulator devices are employed (as experimentally observed). However, the electron mobility in strained-Si/SiGe-on-insulator inversion layers is strongly dependent on the strained-silicon layer thickness, TSi, due to an increase of the phonon scattering, which partially counteracts the increase in the mobility achieved by the strain. This effect is less important as the germanium mole fraction, x, is reduced, and as the value of TSi increases.</jats:p> |
| container_issue |
22 |
| container_start_page |
4160 |
| container_title |
Applied Physics Letters |
| container_volume |
80 |
| format_de105 |
Article, E-Article |
| format_de14 |
Article, E-Article |
| format_de15 |
Article, E-Article |
| format_de520 |
Article, E-Article |
| format_de540 |
Article, E-Article |
| format_dech1 |
Article, E-Article |
| format_ded117 |
Article, E-Article |
| format_degla1 |
E-Article |
| format_del152 |
Buch |
| format_del189 |
Article, E-Article |
| format_dezi4 |
Article |
| format_dezwi2 |
Article, E-Article |
| format_finc |
Article, E-Article |
| format_nrw |
Article, E-Article |
| _version_ |
1792347445219295232 |
| geogr_code |
not assigned |
| last_indexed |
2024-03-01T17:55:23.592Z |
| geogr_code_person |
not assigned |
| openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Strained-Si%2FSiGe-on-insulator+inversion+layers%3A+The+role+of+strained-Si+layer+thickness+on+electron+mobility&rft.date=2002-06-03&genre=article&issn=1077-3118&volume=80&issue=22&spage=4160&epage=4162&pages=4160-4162&jtitle=Applied+Physics+Letters&atitle=Strained-Si%2FSiGe-on-insulator+inversion+layers%3A+The+role+of+strained-Si+layer+thickness+on+electron+mobility&aulast=Godoy&aufirst=A.&rft_id=info%3Adoi%2F10.1063%2F1.1483907&rft.language%5B0%5D=eng |
| SOLR | |
| _version_ | 1792347445219295232 |
| author | Gámiz, F., Roldán, J. B., Godoy, A. |
| author_facet | Gámiz, F., Roldán, J. B., Godoy, A., Gámiz, F., Roldán, J. B., Godoy, A. |
| author_sort | gámiz, f. |
| container_issue | 22 |
| container_start_page | 4160 |
| container_title | Applied Physics Letters |
| container_volume | 80 |
| description | <jats:p>We show by Monte Carlo simulation that electron mobility is greater when strained-silicon inversion layers are grown on SiGe-on-insulator substrates than when unstrained-silicon-on-insulator devices are employed (as experimentally observed). However, the electron mobility in strained-Si/SiGe-on-insulator inversion layers is strongly dependent on the strained-silicon layer thickness, TSi, due to an increase of the phonon scattering, which partially counteracts the increase in the mobility achieved by the strain. This effect is less important as the germanium mole fraction, x, is reduced, and as the value of TSi increases.</jats:p> |
| doi_str_mv | 10.1063/1.1483907 |
| facet_avail | Online |
| finc_class_facet | Physik |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
| format_de15 | Article, E-Article |
| format_de520 | Article, E-Article |
| format_de540 | Article, E-Article |
| format_dech1 | Article, E-Article |
| format_ded117 | Article, E-Article |
| format_degla1 | E-Article |
| format_del152 | Buch |
| format_del189 | Article, E-Article |
| format_dezi4 | Article |
| format_dezwi2 | Article, E-Article |
| format_finc | Article, E-Article |
| format_nrw | Article, E-Article |
| geogr_code | not assigned |
| geogr_code_person | not assigned |
| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjE0ODM5MDc |
| imprint | AIP Publishing, 2002 |
| imprint_str_mv | AIP Publishing, 2002 |
| institution | DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4 |
| issn | 1077-3118, 0003-6951 |
| issn_str_mv | 1077-3118, 0003-6951 |
| language | English |
| last_indexed | 2024-03-01T17:55:23.592Z |
| match_str | gamiz2002strainedsisigeoninsulatorinversionlayerstheroleofstrainedsilayerthicknessonelectronmobility |
| mega_collection | AIP Publishing (CrossRef) |
| physical | 4160-4162 |
| publishDate | 2002 |
| publishDateSort | 2002 |
| publisher | AIP Publishing |
| record_format | ai |
| recordtype | ai |
| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Gámiz, F. Roldán, J. B. Godoy, A. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.1483907 <jats:p>We show by Monte Carlo simulation that electron mobility is greater when strained-silicon inversion layers are grown on SiGe-on-insulator substrates than when unstrained-silicon-on-insulator devices are employed (as experimentally observed). However, the electron mobility in strained-Si/SiGe-on-insulator inversion layers is strongly dependent on the strained-silicon layer thickness, TSi, due to an increase of the phonon scattering, which partially counteracts the increase in the mobility achieved by the strain. This effect is less important as the germanium mole fraction, x, is reduced, and as the value of TSi increases.</jats:p> Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility Applied Physics Letters |
| spellingShingle | Gámiz, F., Roldán, J. B., Godoy, A., Applied Physics Letters, Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility, Physics and Astronomy (miscellaneous) |
| title | Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| title_full | Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| title_fullStr | Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| title_full_unstemmed | Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| title_short | Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| title_sort | strained-si/sige-on-insulator inversion layers: the role of strained-si layer thickness on electron mobility |
| title_unstemmed | Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.1483907 |