author_facet Burghartz, Joachim N.
Stanis, Carol L.
Ronsheim, Paul A.
Burghartz, Joachim N.
Stanis, Carol L.
Ronsheim, Paul A.
author Burghartz, Joachim N.
Stanis, Carol L.
Ronsheim, Paul A.
spellingShingle Burghartz, Joachim N.
Stanis, Carol L.
Ronsheim, Paul A.
Applied Physics Letters
Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
Physics and Astronomy (miscellaneous)
author_sort burghartz, joachim n.
spelling Burghartz, Joachim N. Stanis, Carol L. Ronsheim, Paul A. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.115147 <jats:p>Experimental results of the effects of the arsenic doping concentration on the boron outdiffusion in n-polycrystalline/p-monocrystalline silicon structures are presented. The boron diffusivity is only 30 times larger in polycrystalline silicon than in monocrystalline silicon if the arsenic doping is high enough to cause enhanced grain growth. The diffusivity increase is about 130 if the polycrystalline silicon has small grains due to low arsenic doping. The boron loss from the base region of an advanced bipolar transistor doping profile by outdiffusion into the emitter polycrystalline silicon is of the order of 20% and needs to be considered for accurate device modeling.</jats:p> Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures Applied Physics Letters
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title Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_unstemmed Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_full Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_fullStr Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_full_unstemmed Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_short Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_sort dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
topic Physics and Astronomy (miscellaneous)
url http://dx.doi.org/10.1063/1.115147
publishDate 1995
physical 3156-3158
description <jats:p>Experimental results of the effects of the arsenic doping concentration on the boron outdiffusion in n-polycrystalline/p-monocrystalline silicon structures are presented. The boron diffusivity is only 30 times larger in polycrystalline silicon than in monocrystalline silicon if the arsenic doping is high enough to cause enhanced grain growth. The diffusivity increase is about 130 if the polycrystalline silicon has small grains due to low arsenic doping. The boron loss from the base region of an advanced bipolar transistor doping profile by outdiffusion into the emitter polycrystalline silicon is of the order of 20% and needs to be considered for accurate device modeling.</jats:p>
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author Burghartz, Joachim N., Stanis, Carol L., Ronsheim, Paul A.
author_facet Burghartz, Joachim N., Stanis, Carol L., Ronsheim, Paul A., Burghartz, Joachim N., Stanis, Carol L., Ronsheim, Paul A.
author_sort burghartz, joachim n.
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description <jats:p>Experimental results of the effects of the arsenic doping concentration on the boron outdiffusion in n-polycrystalline/p-monocrystalline silicon structures are presented. The boron diffusivity is only 30 times larger in polycrystalline silicon than in monocrystalline silicon if the arsenic doping is high enough to cause enhanced grain growth. The diffusivity increase is about 130 if the polycrystalline silicon has small grains due to low arsenic doping. The boron loss from the base region of an advanced bipolar transistor doping profile by outdiffusion into the emitter polycrystalline silicon is of the order of 20% and needs to be considered for accurate device modeling.</jats:p>
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spelling Burghartz, Joachim N. Stanis, Carol L. Ronsheim, Paul A. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.115147 <jats:p>Experimental results of the effects of the arsenic doping concentration on the boron outdiffusion in n-polycrystalline/p-monocrystalline silicon structures are presented. The boron diffusivity is only 30 times larger in polycrystalline silicon than in monocrystalline silicon if the arsenic doping is high enough to cause enhanced grain growth. The diffusivity increase is about 130 if the polycrystalline silicon has small grains due to low arsenic doping. The boron loss from the base region of an advanced bipolar transistor doping profile by outdiffusion into the emitter polycrystalline silicon is of the order of 20% and needs to be considered for accurate device modeling.</jats:p> Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures Applied Physics Letters
spellingShingle Burghartz, Joachim N., Stanis, Carol L., Ronsheim, Paul A., Applied Physics Letters, Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures, Physics and Astronomy (miscellaneous)
title Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_full Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_fullStr Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_full_unstemmed Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_short Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_sort dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
title_unstemmed Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
topic Physics and Astronomy (miscellaneous)
url http://dx.doi.org/10.1063/1.115147