Eintrag weiter verarbeiten
Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
Gespeichert in:
Zeitschriftentitel: | Applied Physics Letters |
---|---|
Personen und Körperschaften: | , , |
In: | Applied Physics Letters, 67, 1995, 21, S. 3156-3158 |
Format: | E-Article |
Sprache: | Englisch |
veröffentlicht: |
AIP Publishing
|
Schlagwörter: |
author_facet |
Burghartz, Joachim N. Stanis, Carol L. Ronsheim, Paul A. Burghartz, Joachim N. Stanis, Carol L. Ronsheim, Paul A. |
---|---|
author |
Burghartz, Joachim N. Stanis, Carol L. Ronsheim, Paul A. |
spellingShingle |
Burghartz, Joachim N. Stanis, Carol L. Ronsheim, Paul A. Applied Physics Letters Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures Physics and Astronomy (miscellaneous) |
author_sort |
burghartz, joachim n. |
spelling |
Burghartz, Joachim N. Stanis, Carol L. Ronsheim, Paul A. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.115147 <jats:p>Experimental results of the effects of the arsenic doping concentration on the boron outdiffusion in n-polycrystalline/p-monocrystalline silicon structures are presented. The boron diffusivity is only 30 times larger in polycrystalline silicon than in monocrystalline silicon if the arsenic doping is high enough to cause enhanced grain growth. The diffusivity increase is about 130 if the polycrystalline silicon has small grains due to low arsenic doping. The boron loss from the base region of an advanced bipolar transistor doping profile by outdiffusion into the emitter polycrystalline silicon is of the order of 20% and needs to be considered for accurate device modeling.</jats:p> Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures Applied Physics Letters |
doi_str_mv |
10.1063/1.115147 |
facet_avail |
Online |
finc_class_facet |
Physik |
format |
ElectronicArticle |
fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjExNTE0Nw |
id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjExNTE0Nw |
institution |
DE-D275 DE-Bn3 DE-Brt1 DE-D161 DE-Gla1 DE-Zi4 DE-15 DE-Pl11 DE-Rs1 DE-105 DE-14 DE-Ch1 DE-L229 |
imprint |
AIP Publishing, 1995 |
imprint_str_mv |
AIP Publishing, 1995 |
issn |
0003-6951 1077-3118 |
issn_str_mv |
0003-6951 1077-3118 |
language |
English |
mega_collection |
AIP Publishing (CrossRef) |
match_str |
burghartz1995dopantinteractionsduringthediffusionofarsenicandboroninoppositedirectionsinpolycrystallinemonocrystallinesiliconstructures |
publishDateSort |
1995 |
publisher |
AIP Publishing |
recordtype |
ai |
record_format |
ai |
series |
Applied Physics Letters |
source_id |
49 |
title |
Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_unstemmed |
Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_full |
Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_fullStr |
Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_full_unstemmed |
Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_short |
Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_sort |
dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
topic |
Physics and Astronomy (miscellaneous) |
url |
http://dx.doi.org/10.1063/1.115147 |
publishDate |
1995 |
physical |
3156-3158 |
description |
<jats:p>Experimental results of the effects of the arsenic doping concentration on the boron outdiffusion in n-polycrystalline/p-monocrystalline silicon structures are presented. The boron diffusivity is only 30 times larger in polycrystalline silicon than in monocrystalline silicon if the arsenic doping is high enough to cause enhanced grain growth. The diffusivity increase is about 130 if the polycrystalline silicon has small grains due to low arsenic doping. The boron loss from the base region of an advanced bipolar transistor doping profile by outdiffusion into the emitter polycrystalline silicon is of the order of 20% and needs to be considered for accurate device modeling.</jats:p> |
container_issue |
21 |
container_start_page |
3156 |
container_title |
Applied Physics Letters |
container_volume |
67 |
format_de105 |
Article, E-Article |
format_de14 |
Article, E-Article |
format_de15 |
Article, E-Article |
format_de520 |
Article, E-Article |
format_de540 |
Article, E-Article |
format_dech1 |
Article, E-Article |
format_ded117 |
Article, E-Article |
format_degla1 |
E-Article |
format_del152 |
Buch |
format_del189 |
Article, E-Article |
format_dezi4 |
Article |
format_dezwi2 |
Article, E-Article |
format_finc |
Article, E-Article |
format_nrw |
Article, E-Article |
_version_ |
1792346532044865547 |
geogr_code |
not assigned |
last_indexed |
2024-03-01T17:40:27.344Z |
geogr_code_person |
not assigned |
openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Dopant+interactions+during+the+diffusion+of+arsenic+and+boron+in+opposite+directions+in+polycrystalline%2Fmonocrystalline+silicon+structures&rft.date=1995-11-20&genre=article&issn=1077-3118&volume=67&issue=21&spage=3156&epage=3158&pages=3156-3158&jtitle=Applied+Physics+Letters&atitle=Dopant+interactions+during+the+diffusion+of+arsenic+and+boron+in+opposite+directions+in+polycrystalline%2Fmonocrystalline+silicon+structures&aulast=Ronsheim&aufirst=Paul+A.&rft_id=info%3Adoi%2F10.1063%2F1.115147&rft.language%5B0%5D=eng |
SOLR | |
_version_ | 1792346532044865547 |
author | Burghartz, Joachim N., Stanis, Carol L., Ronsheim, Paul A. |
author_facet | Burghartz, Joachim N., Stanis, Carol L., Ronsheim, Paul A., Burghartz, Joachim N., Stanis, Carol L., Ronsheim, Paul A. |
author_sort | burghartz, joachim n. |
container_issue | 21 |
container_start_page | 3156 |
container_title | Applied Physics Letters |
container_volume | 67 |
description | <jats:p>Experimental results of the effects of the arsenic doping concentration on the boron outdiffusion in n-polycrystalline/p-monocrystalline silicon structures are presented. The boron diffusivity is only 30 times larger in polycrystalline silicon than in monocrystalline silicon if the arsenic doping is high enough to cause enhanced grain growth. The diffusivity increase is about 130 if the polycrystalline silicon has small grains due to low arsenic doping. The boron loss from the base region of an advanced bipolar transistor doping profile by outdiffusion into the emitter polycrystalline silicon is of the order of 20% and needs to be considered for accurate device modeling.</jats:p> |
doi_str_mv | 10.1063/1.115147 |
facet_avail | Online |
finc_class_facet | Physik |
format | ElectronicArticle |
format_de105 | Article, E-Article |
format_de14 | Article, E-Article |
format_de15 | Article, E-Article |
format_de520 | Article, E-Article |
format_de540 | Article, E-Article |
format_dech1 | Article, E-Article |
format_ded117 | Article, E-Article |
format_degla1 | E-Article |
format_del152 | Buch |
format_del189 | Article, E-Article |
format_dezi4 | Article |
format_dezwi2 | Article, E-Article |
format_finc | Article, E-Article |
format_nrw | Article, E-Article |
geogr_code | not assigned |
geogr_code_person | not assigned |
id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjExNTE0Nw |
imprint | AIP Publishing, 1995 |
imprint_str_mv | AIP Publishing, 1995 |
institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
issn | 0003-6951, 1077-3118 |
issn_str_mv | 0003-6951, 1077-3118 |
language | English |
last_indexed | 2024-03-01T17:40:27.344Z |
match_str | burghartz1995dopantinteractionsduringthediffusionofarsenicandboroninoppositedirectionsinpolycrystallinemonocrystallinesiliconstructures |
mega_collection | AIP Publishing (CrossRef) |
physical | 3156-3158 |
publishDate | 1995 |
publishDateSort | 1995 |
publisher | AIP Publishing |
record_format | ai |
recordtype | ai |
series | Applied Physics Letters |
source_id | 49 |
spelling | Burghartz, Joachim N. Stanis, Carol L. Ronsheim, Paul A. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.115147 <jats:p>Experimental results of the effects of the arsenic doping concentration on the boron outdiffusion in n-polycrystalline/p-monocrystalline silicon structures are presented. The boron diffusivity is only 30 times larger in polycrystalline silicon than in monocrystalline silicon if the arsenic doping is high enough to cause enhanced grain growth. The diffusivity increase is about 130 if the polycrystalline silicon has small grains due to low arsenic doping. The boron loss from the base region of an advanced bipolar transistor doping profile by outdiffusion into the emitter polycrystalline silicon is of the order of 20% and needs to be considered for accurate device modeling.</jats:p> Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures Applied Physics Letters |
spellingShingle | Burghartz, Joachim N., Stanis, Carol L., Ronsheim, Paul A., Applied Physics Letters, Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures, Physics and Astronomy (miscellaneous) |
title | Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_full | Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_fullStr | Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_full_unstemmed | Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_short | Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_sort | dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
title_unstemmed | Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures |
topic | Physics and Astronomy (miscellaneous) |
url | http://dx.doi.org/10.1063/1.115147 |